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| BUP 314S Preliminary data IGBT * High switching speed * Very low switching losses * Low tail current * Latch-up free * Avalanche rated Pin 1 G Type BUP 314S Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code C67040-A4207-A2 Pin 3 E VCE IC Package TO-218 AB 1200V 25A VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 25 17 TC = 25 C TC = 90 C Pulsed collector current, tp = 1 ms ICpuls 50 34 TC = 25 C TC = 90 C Avalanche energy, single pulse EAS 65 mJ IC = 25 A, VCC = 50 V, RGE = 25 L = 200 H, Tj = 25 C Power dissipation Ptot 300 W -55 ... + 150 -55 ... + 150 C TC = 25 C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 Feb-07-1997 BUP 314S Preliminary data Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC 0.42 K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CES 1200 5.5 5.5 4.6 8 6.6 6.5 7.6 - V VGE = 0 V, IC = 0.3 mA, Tj = 25 C Gate threshold voltage VGE(th) 4.5 VGE = VCE, IC = 0.35 mA, Tj = 25 C Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 15 A, Tj = 25 C VGE = 15 V, IC = 15 A, Tj = 125 C VGE = 15 V, IC = 30 A, Tj = 25 C VGE = 15 V, IC = 30 A, Tj = 125 C Zero gate voltage collector current ICES 0.8 mA nA 100 VCE = 1200 V, VGE = 0 V, Tj = 25 C Gate-emitter leakage current IGES VGE = 25 V, VCE = 0 V Semiconductor Group 2 Feb-07-1997 BUP 314S Preliminary data AC Characteristics Transconductance gfs 8.5 12 1950 180 120 - S pF 2600 270 180 VCE = 20 V, IC = 15 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit td(on) 65 100 ns VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 47 Rise time tr 60 90 VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 47 Turn-off delay time td(off) 420 560 VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 47 Fall time tf 70 95 VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 47 Semiconductor Group 3 Feb-07-1997 BUP 314S Preliminary data Power dissipation Ptot = (TC) parameter: Tj 150 C 320 Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 26 A W 22 Ptot 240 IC 20 18 200 16 14 160 12 120 10 8 80 6 4 2 0 0 20 40 60 80 100 120 C 160 0 0 20 40 60 80 100 120 C 160 40 TC TC Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 2 tp = 18.0s Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 IGBT A K/W 100 s IC 10 1 ZthJC 10 -1 1 ms D = 0.50 0.20 10 0 10 ms 10 -2 0.10 0.05 0.02 0.01 DC 10 -1 0 10 10 -3 -5 10 single pulse 10 1 10 2 10 3 V 10 -4 10 -3 10 -2 10 -1 s 10 0 VCE tp Semiconductor Group 4 Feb-07-1997 BUP 314S Preliminary data Typ. output characteristics Typ. output characteristics IC = f (VCE) parameter: tp = 80 s, Tj = 25 C 55 A IC = f (VCE) parameter: tp = 80 s, Tj = 125 C 55 A IC 45 40 35 30 25 20 15 10 5 0 0 17V 15V 13V 11V 9V 7V IC 45 40 35 30 25 20 15 10 5 17V 15V 13V 11V 9V 7V 2 4 6 V 10 0 0 2 4 6 V 10 VCE VCE Typ. transfer characteristics IC = f (VGE) parameter: tp=80s,VCE=20 V 60 A 50 IC 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 V 14 VGE Semiconductor Group 5 Feb-07-1997 BUP 314S Preliminary data Typ. switching time Typ. switching time t = f (IC) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 47 10 3 t = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, IC = 15 A 10 4 ns t tdoff ns 10 3 tdoff t 10 2 tr tdon tf 10 2 tdon tr tf 10 1 0 5 10 15 20 25 30 A IC 40 10 1 0 20 40 60 80 100 120 140 160 RG 200 Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 48.9 8.0 E = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, IC = 15 A 8.0 mWs E 6.0 Eon 5.0 E mWs 6.0 5.0 4.0 4.0 Eon 3.0 3.0 2.0 Eoff 1.0 0.0 0 5 10 15 20 25 30 A IC 40 2.0 Eoff 1.0 0.0 0 20 40 60 80 100 120 140 160 RG 200 Semiconductor Group 6 Feb-07-1997 BUP 314S Preliminary data Typ. capacitances Reverse biased safe operating area C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 4 ICpuls = f (VCE) , Tj = 150C parameter: VGE = 15 V 2.5 pF C 10 3 1.5 ICpuls/IC Ciss Coss 10 2 Crss 1.0 0.5 0.0 10 1 0 0 200 400 600 800 1000 1200 5 10 15 20 25 30 V 40 VCE V 1600 VCE Short circuit safe operating area ICsc = f (VCE) , Tj = 150C parameter: VGE = 15 V, tsc 10 s, L < 25 nH 10 ICsc/IC(90C) 6 4 2 0 0 200 400 600 800 1000 1200 V 1600 VCE Semiconductor Group 7 Feb-07-1997 |
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